| PART |
Description |
Maker |
| MRF9030MR1 MRF9030MBR1 |
945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF182S MRF182 |
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale Semiconductor, Inc
MOTOROLA[Motorola, Inc]
|
| MRF9060MR1 |
945 MHz, 60 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
|
Freescale (Motorola)
|
| MRF282SR1 MRF282ZR1 |
2000 MHz, 10 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
|
Freescale (Motorola)
|
| MRF9210R3 |
880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
|
Freescale (Motorola)
|
| MRF21010 |
MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
|
Motorola
|
| SVD5N60AF SVD5N60AT |
5A, 600V NCHANNEL MOSFET
|
Silan Microelectronics Joint-stock
|
| 2SK220006 |
NCHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
Toshiba Semiconductor
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
